| Hersteller | |
| Hersteller-Teilenummer | ASD65R550E |
| EBEE-Teilenummer | E85440011 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 700V 8A 76W 550mΩ 3.5V TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4451 | $ 0.4451 |
| 10+ | $0.3667 | $ 3.6670 |
| 30+ | $0.3320 | $ 9.9600 |
| 100+ | $0.2988 | $ 29.8800 |
| 500+ | $0.2761 | $ 138.0500 |
| 1000+ | $0.2626 | $ 262.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | ANHI ASD65R550E | |
| RoHS | ||
| RDS(on) | 550mΩ | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 3.55pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 178.1W | |
| Drain to Source Voltage | 700V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 599pF | |
| Gate Charge(Qg) | 8nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4451 | $ 0.4451 |
| 10+ | $0.3667 | $ 3.6670 |
| 30+ | $0.3320 | $ 9.9600 |
| 100+ | $0.2988 | $ 29.8800 |
| 500+ | $0.2761 | $ 138.0500 |
| 1000+ | $0.2626 | $ 262.6000 |
