IGBT Transistors / Modules
Manufacturer
- FUXINSEMI
Package
- TO-247-3
Gain Bandwidth Product(GBP)
- -40℃~+175℃
Rated Voltage
- -
Collector Emitter Voltage
- 40A
Gate Threshold Voltage (Vgs(th)@Id)
- 333W
Turn?on Delay Time (Td(on))
- 204ns
Collector-Emitter Breakdown Voltage (Vces)
- -
Input Capacitance (Cies@Vce)
- 1.35kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 1.781nF@25V
Total Gate Charge (Qg@Ic,Vge)
- 4.8V@1mA
Diode Reverse Recovery Time (Trr)
- 175nC@20A,15V
Turn?off Switching Loss (Eoff)
- -
Turn?on Switching Loss (Eon)
- -
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
- 1.02mJ
Diode Forward Voltage (Vf@If)
- 1.85V@20A,15V
Chip
- 1.5V@20A
Images | Pricing | Quantity | Availability | Mfr.Part # | eBee Part# | Manufacturer | Product Name | Description | RoHS | Package | Packaging |
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Images | Pricing | Quantity | Availability | Mfr.Part # | eBee Part# | Manufacturer | Product Name | Description | RoHS | Package | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|
1+ $2.1800 10+ $1.8227 30+ $1.6274 90+ $1.4052 | Min: 1 Mult: 1 | 487 In Stock | IHW20N135R5F | E87467022 | FUXINSEMI | FUXINSEMI IHW20N135R5F | - | - | TO-247-3 | Tube-packed |
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