49% off
| Manufacturer | |
| Mfr. Part # | IGW25T120 |
| EBEE Part # | E8536094 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2864 | $ 4.2864 |
| 10+ | $4.0863 | $ 40.8630 |
| 30+ | $3.9670 | $ 119.0100 |
| 90+ | $3.8459 | $ 346.1310 |
| 510+ | $3.7895 | $ 1932.6450 |
| 990+ | $3.7637 | $ 3726.0630 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,IGBTs ,Single IGBTs | |
| Datasheet | Infineon IGW25T120 | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Pd - Power Dissipation | 190W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 155nC@15V | |
| Td(off) | 560ns | |
| Td(on) | 50ns | |
| Reverse Transfer Capacitance (Cres) | 82pF | |
| Switching Energy(Eoff) | 2.2mJ | |
| Turn-On Energy (Eon) | 2mJ | |
| Output Capacitance(Coes) | 96pF |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2864 | $ 4.2864 |
| 10+ | $4.0863 | $ 40.8630 |
| 30+ | $3.9670 | $ 119.0100 |
| 90+ | $3.8459 | $ 346.1310 |
| 510+ | $3.7895 | $ 1932.6450 |
| 990+ | $3.7637 | $ 3726.0630 |
