5% off
| Manufacturer | |
| Mfr. Part # | SPT50N65F1A1 |
| EBEE Part # | E8480188 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8579 | $ 1.8579 |
| 10+ | $1.5733 | $ 15.7330 |
| 30+ | $1.3937 | $ 41.8110 |
| 90+ | $1.2113 | $ 109.0170 |
| 510+ | $1.1282 | $ 575.3820 |
| 990+ | $1.0916 | $ 1080.6840 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,IGBTs ,Single IGBTs | |
| Datasheet | SPTECH SPT50N65F1A1 | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | |
| Pd - Power Dissipation | 260W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 162nC@15V | |
| Td(off) | 170ns | |
| Td(on) | 60ns | |
| Reverse Recovery Time(trr) | 90ns | |
| Switching Energy(Eoff) | 600uJ | |
| Turn-On Energy (Eon) | 2.2mJ | |
| Input Capacitance(Cies) | 3.8nF@30V,0V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8579 | $ 1.8579 |
| 10+ | $1.5733 | $ 15.7330 |
| 30+ | $1.3937 | $ 41.8110 |
| 90+ | $1.2113 | $ 109.0170 |
| 510+ | $1.1282 | $ 575.3820 |
| 990+ | $1.0916 | $ 1080.6840 |
