20% off
| Fabricant | |
| Référence Fabricant | YFWD313065CS |
| Référence EBEE | E819626410 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | TO-252 SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.6500 | $ 1.6500 |
| 10+ | $1.3922 | $ 13.9220 |
| 30+ | $1.2308 | $ 36.9240 |
| 100+ | $1.0657 | $ 106.5700 |
| 500+ | $0.9907 | $ 495.3500 |
| 1000+ | $0.9590 | $ 959.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Dispositifs de carbure de silicium (SiC) ,Diodes SiC | |
| Fiche Technique | YFW YFWD313065CS | |
| RoHS | ||
| Courant de fuite inverse (Ir) | 300uA | |
| Tension - marche arrière (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 2.4V | |
| Current - Rectified | 16A | |
| Non-Repetitive Peak Forward Surge Current | 104A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.6500 | $ 1.6500 |
| 10+ | $1.3922 | $ 13.9220 |
| 30+ | $1.2308 | $ 36.9240 |
| 100+ | $1.0657 | $ 106.5700 |
| 500+ | $0.9907 | $ 495.3500 |
| 1000+ | $0.9590 | $ 959.0000 |
