| Fabricant | |
| Référence Fabricant | GC4D12120A |
| Référence EBEE | E87435077 |
| Boîtier | TO-220-2 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 1.2kV 1.35V 33A TO-220-2 SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.6455 | $ 2.6455 |
| 10+ | $2.2265 | $ 22.2650 |
| 50+ | $1.9636 | $ 98.1800 |
| 100+ | $1.6946 | $ 169.4600 |
| 500+ | $1.5740 | $ 787.0000 |
| 1000+ | $1.5215 | $ 1521.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Dispositifs de carbure de silicium (SiC) ,Diodes SiC | |
| Fiche Technique | SUPSiC GC4D12120A | |
| RoHS | ||
| Courant de fuite inverse (Ir) | 250uA@1200V | |
| Tension - marche arrière (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.35V | |
| Current - Rectified | 33A | |
| Non-Repetitive Peak Forward Surge Current | 71A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.6455 | $ 2.6455 |
| 10+ | $2.2265 | $ 22.2650 |
| 50+ | $1.9636 | $ 98.1800 |
| 100+ | $1.6946 | $ 169.4600 |
| 500+ | $1.5740 | $ 787.0000 |
| 1000+ | $1.5215 | $ 1521.5000 |
