| Fabricant | |
| Référence Fabricant | GC3D10065A |
| Référence EBEE | E87435068 |
| Boîtier | TO-220-2 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 650V 1.5V 30A TO-220-2 SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.7198 | $ 0.7198 |
| 10+ | $0.5831 | $ 5.8310 |
| 50+ | $0.4989 | $ 24.9450 |
| 100+ | $0.4306 | $ 43.0600 |
| 500+ | $0.3893 | $ 194.6500 |
| 1000+ | $0.3686 | $ 368.6000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Fiche Technique | SUPSiC GC3D10065A | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 60uA@650V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.5V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 90A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.7198 | $ 0.7198 |
| 10+ | $0.5831 | $ 5.8310 |
| 50+ | $0.4989 | $ 24.9450 |
| 100+ | $0.4306 | $ 43.0600 |
| 500+ | $0.3893 | $ 194.6500 |
| 1000+ | $0.3686 | $ 368.6000 |
