| Fabricant | |
| Référence Fabricant | FFSH1265BDN-F085 |
| Référence EBEE | E8898151 |
| Boîtier | TO-247-3 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | TO-247-3 SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $4.7057 | $ 4.7057 |
| 10+ | $4.6091 | $ 46.0910 |
| 30+ | $4.5442 | $ 136.3260 |
| 100+ | $4.4793 | $ 447.9300 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Fiche Technique | onsemi FFSH1265BDN-F085 | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 40uA@650V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@6A | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 24A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $4.7057 | $ 4.7057 |
| 10+ | $4.6091 | $ 46.0910 |
| 30+ | $4.5442 | $ 136.3260 |
| 100+ | $4.4793 | $ 447.9300 |
