| Fabricant | |
| Référence Fabricant | SS8550 Y2(RANGE:200-350) |
| Référence EBEE | E88542 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| Description | 25V 300mW 200@100mA,1V 1.5A PNP SOT-23 Bipolar (BJT) ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0150 | $ 0.7500 |
| 500+ | $0.0117 | $ 5.8500 |
| 3000+ | $0.0104 | $ 31.2000 |
| 6000+ | $0.0092 | $ 55.2000 |
| 24000+ | $0.0089 | $ 213.6000 |
| 51000+ | $0.0085 | $ 433.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,Bipolaire (BJT) | |
| Fiche Technique | Jiangsu Changjing Electronics Technology Co., Ltd. SS8550 Y2(RANGE:200-350) | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Transistor Type | PNP | |
| Collector Current (Ic) | 1.5A | |
| Power Dissipation (Pd) | 300mW | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V | |
| DC Current Gain (hFE@Ic,Vce) | 200@100mA,1V | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@800mA,80mA |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0150 | $ 0.7500 |
| 500+ | $0.0117 | $ 5.8500 |
| 3000+ | $0.0104 | $ 31.2000 |
| 6000+ | $0.0092 | $ 55.2000 |
| 24000+ | $0.0089 | $ 213.6000 |
| 51000+ | $0.0085 | $ 433.5000 |
