| Fabricant | |
| Référence Fabricant | IDH04G65C6XKSA1 |
| Référence EBEE | E86577446 |
| Boîtier | TO-220-2 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 650V 1.35V@4A 12A TO-220-2 SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.6975 | $ 1.6975 |
| 10+ | $1.4467 | $ 14.4670 |
| 50+ | $1.2905 | $ 64.5250 |
| 100+ | $1.1312 | $ 113.1200 |
| 500+ | $1.0586 | $ 529.3000 |
| 1000+ | $1.0271 | $ 1027.1000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Dispositifs de carbure de silicium (SiC) ,Diodes SiC | |
| Fiche Technique | Infineon Technologies IDH04G65C6XKSA1 | |
| RoHS | ||
| Courant de fuite inverse (Ir) | 14uA@420V | |
| Tension - marche arrière (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.35V@4A | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 29A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.6975 | $ 1.6975 |
| 10+ | $1.4467 | $ 14.4670 |
| 50+ | $1.2905 | $ 64.5250 |
| 100+ | $1.1312 | $ 113.1200 |
| 500+ | $1.0586 | $ 529.3000 |
| 1000+ | $1.0271 | $ 1027.1000 |
