25% off
| Fabricant | |
| Référence Fabricant | HC4D40120H |
| Référence EBEE | E819723893 |
| Boîtier | TO-247-2L |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 1.2kV Independent Type 1.5V@40A TO-247-2L SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $6.1897 | $ 6.1897 |
| 10+ | $5.3657 | $ 53.6570 |
| 30+ | $4.8632 | $ 145.8960 |
| 90+ | $4.4416 | $ 399.7440 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Fiche Technique | HXY MOSFET HC4D40120H | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 300uA@1200V | |
| Diode Configuration | Independent | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.5V@40A | |
| Non-Repetitive Peak Forward Surge Current | 247A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $6.1897 | $ 6.1897 |
| 10+ | $5.3657 | $ 53.6570 |
| 30+ | $4.8632 | $ 145.8960 |
| 90+ | $4.4416 | $ 399.7440 |
