30% off
| Fabricant | |
| Référence Fabricant | HC4D08120A |
| Référence EBEE | E819723883 |
| Boîtier | TO-220-2L |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 1.2kV Independent Type 1.5V@8A TO-220-2L SiC Diodes ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.2700 | $ 1.2700 |
| 10+ | $1.0788 | $ 10.7880 |
| 50+ | $0.9330 | $ 46.6500 |
| 100+ | $0.8110 | $ 81.1000 |
| 500+ | $0.7549 | $ 377.4500 |
| 1000+ | $0.7312 | $ 731.2000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Fiche Technique | HXY MOSFET HC4D08120A | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 250uA@1200V | |
| Diode Configuration | Independent | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.5V@8A | |
| Non-Repetitive Peak Forward Surge Current | 64A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.2700 | $ 1.2700 |
| 10+ | $1.0788 | $ 10.7880 |
| 50+ | $0.9330 | $ 46.6500 |
| 100+ | $0.8110 | $ 81.1000 |
| 500+ | $0.7549 | $ 377.4500 |
| 1000+ | $0.7312 | $ 731.2000 |
