15% off
| Fabricante | |
| Código de Pieza del Fabricante | VBZA4412 |
| Código de Pieza EBEE | E8700586 |
| Paquete | SO-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 20V 13A 2.2W 3V@250uA 1 N-channel SO-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2405 | $ 1.2025 |
| 50+ | $0.1901 | $ 9.5050 |
| 150+ | $0.1686 | $ 25.2900 |
| 500+ | $0.1416 | $ 70.8000 |
| 2500+ | $0.1255 | $ 313.7500 |
| 4000+ | $0.1183 | $ 473.2000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | VBsemi Elec VBZA4412 | |
| RoHS | ||
| RDS (on) | - | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 73pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.2W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | 800pF | |
| Gate Charge(Qg) | 6.8nC@5V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2405 | $ 1.2025 |
| 50+ | $0.1901 | $ 9.5050 |
| 150+ | $0.1686 | $ 25.2900 |
| 500+ | $0.1416 | $ 70.8000 |
| 2500+ | $0.1255 | $ 313.7500 |
| 4000+ | $0.1183 | $ 473.2000 |
