| Fabricante | |
| Código de Pieza del Fabricante | TK11P65W-VB |
| Código de Pieza EBEE | E822357295 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 700V 11A 390mΩ@10V 4V 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.3544 | $ 1.3544 |
| 10+ | $1.1210 | $ 11.2100 |
| 30+ | $0.9908 | $ 29.7240 |
| 100+ | $0.8463 | $ 84.6300 |
| 500+ | $0.7812 | $ 390.6000 |
| 1000+ | $0.7526 | $ 752.6000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | VBsemi Elec TK11P65W-VB | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 390mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 180W | |
| Drain to Source Voltage | 700V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 2.5nF | |
| Output Capacitance(Coss) | 51pF | |
| Gate Charge(Qg) | 26nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.3544 | $ 1.3544 |
| 10+ | $1.1210 | $ 11.2100 |
| 30+ | $0.9908 | $ 29.7240 |
| 100+ | $0.8463 | $ 84.6300 |
| 500+ | $0.7812 | $ 390.6000 |
| 1000+ | $0.7526 | $ 752.6000 |
