| Fabricante | |
| Código de Pieza del Fabricante | STD7NM80-VB |
| Código de Pieza EBEE | E820755598 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 800V 5A 1.2Ω@10V 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.2641 | $ 1.2641 |
| 10+ | $1.0448 | $ 10.4480 |
| 30+ | $0.9251 | $ 27.7530 |
| 100+ | $0.7901 | $ 79.0100 |
| 500+ | $0.7287 | $ 364.3500 |
| 1000+ | $0.7027 | $ 702.7000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | VBsemi Elec STD7NM80-VB | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.2Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 490pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 190W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 3.1nF | |
| Output Capacitance(Coss) | 800pF | |
| Gate Charge(Qg) | 200nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.2641 | $ 1.2641 |
| 10+ | $1.0448 | $ 10.4480 |
| 30+ | $0.9251 | $ 27.7530 |
| 100+ | $0.7901 | $ 79.0100 |
| 500+ | $0.7287 | $ 364.3500 |
| 1000+ | $0.7027 | $ 702.7000 |
