| Fabricante | |
| Código de Pieza del Fabricante | STD5407NT4G-VB |
| Código de Pieza EBEE | E822389492 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4970 | $ 0.4970 |
| 10+ | $0.3906 | $ 3.9060 |
| 30+ | $0.3446 | $ 10.3380 |
| 100+ | $0.2874 | $ 28.7400 |
| 500+ | $0.2620 | $ 131.0000 |
| 1000+ | $0.2461 | $ 246.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | VBsemi Elec STD5407NT4G-VB | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 14mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 570pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 1.801nF | |
| Output Capacitance(Coss) | 725pF | |
| Gate Charge(Qg) | 42nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4970 | $ 0.4970 |
| 10+ | $0.3906 | $ 3.9060 |
| 30+ | $0.3446 | $ 10.3380 |
| 100+ | $0.2874 | $ 28.7400 |
| 500+ | $0.2620 | $ 131.0000 |
| 1000+ | $0.2461 | $ 246.1000 |
