| Fabricante | |
| Código de Pieza del Fabricante | AOD413A |
| Código de Pieza EBEE | E85371003 |
| Paquete | TO-252-3L |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 40V 30A 32mΩ@10V,20A 59W 1.2V@250uA TO-252-3L MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1380 | $ 0.6900 |
| 50+ | $0.1202 | $ 6.0100 |
| 150+ | $0.1126 | $ 16.8900 |
| 500+ | $0.1032 | $ 51.6000 |
| 2500+ | $0.0989 | $ 247.2500 |
| 5000+ | $0.0964 | $ 482.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | TECH PUBLIC AOD413A | |
| RoHS | ||
| RDS (on) | 32mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 95pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 59W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.12nF | |
| Gate Charge(Qg) | 27nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1380 | $ 0.6900 |
| 50+ | $0.1202 | $ 6.0100 |
| 150+ | $0.1126 | $ 16.8900 |
| 500+ | $0.1032 | $ 51.6000 |
| 2500+ | $0.0989 | $ 247.2500 |
| 5000+ | $0.0964 | $ 482.0000 |
