| Fabricante | |
| Código de Pieza del Fabricante | STP3N80K5 |
| Código de Pieza EBEE | E8501036 |
| Paquete | TO-220 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 800V 2.5A 2.8Ω@10V,1A 60W 3V@100uA 1 N-channel TO-220 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.9665 | $ 0.9665 |
| 10+ | $0.9433 | $ 9.4330 |
| 30+ | $0.9279 | $ 27.8370 |
| 100+ | $0.9124 | $ 91.2400 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | ST STP3N80K5 | |
| RoHS | ||
| RDS (on) | 2.8Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 0.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Ciss-Input Capacitance | 130pF | |
| Gate Charge(Qg) | 9.5nC@640V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.9665 | $ 0.9665 |
| 10+ | $0.9433 | $ 9.4330 |
| 30+ | $0.9279 | $ 27.8370 |
| 100+ | $0.9124 | $ 91.2400 |
