| Fabricante | |
| Código de Pieza del Fabricante | STP33N60M6 |
| Código de Pieza EBEE | E85268765 |
| Paquete | TO-220 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 600V 25A 125mΩ@10V,12.5A 190W 4.75V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $6.5998 | $ 6.5998 |
| 10+ | $5.7263 | $ 57.2630 |
| 50+ | $5.1934 | $ 259.6700 |
| 100+ | $4.7474 | $ 474.7400 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | ST STP33N60M6 | |
| RoHS | ||
| RDS (on) | 125mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 4.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 190W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 1.515nF | |
| Gate Charge(Qg) | 33.4nC@480V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $6.5998 | $ 6.5998 |
| 10+ | $5.7263 | $ 57.2630 |
| 50+ | $5.1934 | $ 259.6700 |
| 100+ | $4.7474 | $ 474.7400 |
