51% off
| Fabricante | |
| Código de Pieza del Fabricante | STD8N60DM2 |
| Código de Pieza EBEE | E8457504 |
| Paquete | DPAK |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 600V 8A 85W 550mΩ@10V,4A 3V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.7153 | $ 0.7153 |
| 10+ | $0.5981 | $ 5.9810 |
| 30+ | $0.5337 | $ 16.0110 |
| 100+ | $0.4608 | $ 46.0800 |
| 500+ | $0.4282 | $ 214.1000 |
| 1000+ | $0.4142 | $ 414.2000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | ST STD8N60DM2 | |
| RoHS | ||
| RDS (on) | 550mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 0.89pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 449pF | |
| Gate Charge(Qg) | 13.5nC@480V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.7153 | $ 0.7153 |
| 10+ | $0.5981 | $ 5.9810 |
| 30+ | $0.5337 | $ 16.0110 |
| 100+ | $0.4608 | $ 46.0800 |
| 500+ | $0.4282 | $ 214.1000 |
| 1000+ | $0.4142 | $ 414.2000 |
