66% off
| Fabricante | |
| Código de Pieza del Fabricante | STD11N65M5 |
| Código de Pieza EBEE | E8495233 |
| Paquete | TO-252(DPAK) |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 650V 9A 25W 0.48Ω@10V,4.5A 3V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6497 | $ 0.6497 |
| 10+ | $0.5555 | $ 5.5550 |
| 30+ | $0.4963 | $ 14.8890 |
| 100+ | $0.4355 | $ 43.5500 |
| 500+ | $0.4085 | $ 204.2500 |
| 1000+ | $0.3967 | $ 396.7000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | ST STD11N65M5 | |
| RoHS | ||
| RDS (on) | 480mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 644pF | |
| Gate Charge(Qg) | 17nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6497 | $ 0.6497 |
| 10+ | $0.5555 | $ 5.5550 |
| 30+ | $0.4963 | $ 14.8890 |
| 100+ | $0.4355 | $ 43.5500 |
| 500+ | $0.4085 | $ 204.2500 |
| 1000+ | $0.3967 | $ 396.7000 |
