10% off
| Fabricante | |
| Código de Pieza del Fabricante | SW4N60 |
| Código de Pieza EBEE | E8381523 |
| Paquete | TO-252-2 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 600V 4A 147W 2Ω@10V,2A 2.5V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2167 | $ 1.0835 |
| 50+ | $0.1702 | $ 8.5100 |
| 150+ | $0.1502 | $ 22.5300 |
| 500+ | $0.1254 | $ 62.7000 |
| 2500+ | $0.1143 | $ 285.7500 |
| 5000+ | $0.1076 | $ 538.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | Samwin SW4N60 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 2.2Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 7.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 147W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 586pF | |
| Output Capacitance(Coss) | 71pF | |
| Gate Charge(Qg) | 17nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2167 | $ 1.0835 |
| 50+ | $0.1702 | $ 8.5100 |
| 150+ | $0.1502 | $ 22.5300 |
| 500+ | $0.1254 | $ 62.7000 |
| 2500+ | $0.1143 | $ 285.7500 |
| 5000+ | $0.1076 | $ 538.0000 |
