| Fabricante | |
| Código de Pieza del Fabricante | FDMS8680 |
| Código de Pieza EBEE | E8891108 |
| Paquete | Power56-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 30V 35A 7mΩ@10V,14A 50W 1V@250uA 1 N-channel Power-56-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5976 | $ 0.5976 |
| 10+ | $0.5838 | $ 5.8380 |
| 30+ | $0.5731 | $ 17.1930 |
| 100+ | $0.5638 | $ 56.3800 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | onsemi FDMS8680 | |
| RoHS | ||
| RDS (on) | 7mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 145pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 1.59nF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5976 | $ 0.5976 |
| 10+ | $0.5838 | $ 5.8380 |
| 30+ | $0.5731 | $ 17.1930 |
| 100+ | $0.5638 | $ 56.3800 |
