| Fabricante | |
| Código de Pieza del Fabricante | MOT1532D |
| Código de Pieza EBEE | E842368033 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 100V 18.9A 24W 24mΩ@10V,10A 3V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2154 | $ 1.0770 |
| 50+ | $0.1698 | $ 8.4900 |
| 150+ | $0.1502 | $ 22.5300 |
| 500+ | $0.1259 | $ 62.9500 |
| 2500+ | $0.1150 | $ 287.5000 |
| 5000+ | $0.1085 | $ 542.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | MOT MOT1532D | |
| RoHS | ||
| RDS (on) | 42mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 20pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 24W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 18.9A | |
| Ciss-Input Capacitance | 850pF | |
| Gate Charge(Qg) | 6.8nC@10V;[email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2154 | $ 1.0770 |
| 50+ | $0.1698 | $ 8.4900 |
| 150+ | $0.1502 | $ 22.5300 |
| 500+ | $0.1259 | $ 62.9500 |
| 2500+ | $0.1150 | $ 287.5000 |
| 5000+ | $0.1085 | $ 542.5000 |
