| Fabricante | |
| Código de Pieza del Fabricante | IRFB4227 |
| Código de Pieza EBEE | E86719384 |
| Paquete | TO-220EW |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 200V 65A 20mΩ@10V,46A 150W 5V@250uA 1 N-channel TO-220EW MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.1686 | $ 1.1686 |
| 10+ | $0.9680 | $ 9.6800 |
| 50+ | $0.8311 | $ 41.5550 |
| 100+ | $0.7053 | $ 70.5300 |
| 500+ | $0.6512 | $ 325.6000 |
| 1000+ | $0.6257 | $ 625.7000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | Minos IRFB4227 | |
| RoHS | ||
| RDS (on) | 20mΩ@10V | |
| Temperatura de funcionamiento - | - | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 165pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 2.2nF | |
| Gate Charge(Qg) | 58nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.1686 | $ 1.1686 |
| 10+ | $0.9680 | $ 9.6800 |
| 50+ | $0.8311 | $ 41.5550 |
| 100+ | $0.7053 | $ 70.5300 |
| 500+ | $0.6512 | $ 325.6000 |
| 1000+ | $0.6257 | $ 625.7000 |
