| Fabricante | |
| Código de Pieza del Fabricante | 7N65 |
| Código de Pieza EBEE | E85807883 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 650V 7A 1.18Ω@10V,3.5A 48W 2V@250uA TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2214 | $ 1.1070 |
| 50+ | $0.1736 | $ 8.6800 |
| 150+ | $0.1531 | $ 22.9650 |
| 500+ | $0.1275 | $ 63.7500 |
| 2500+ | $0.1132 | $ 283.0000 |
| 5000+ | $0.1064 | $ 532.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | GOODWORK 7N65 | |
| RoHS | ||
| RDS (on) | 1.18Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 21pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 48W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 1.4nF | |
| Gate Charge(Qg) | 38nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.2214 | $ 1.1070 |
| 50+ | $0.1736 | $ 8.6800 |
| 150+ | $0.1531 | $ 22.9650 |
| 500+ | $0.1275 | $ 63.7500 |
| 2500+ | $0.1132 | $ 283.0000 |
| 5000+ | $0.1064 | $ 532.0000 |
