| Fabricante | |
| Código de Pieza del Fabricante | 600R65F |
| Código de Pieza EBEE | E85807884 |
| Paquete | ITO-220AB |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 650V 4.4A 0.6Ω@10V,3.5A 32W 3V@250uA 1 N-channel ITO-220AB MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6624 | $ 0.6624 |
| 10+ | $0.5324 | $ 5.3240 |
| 50+ | $0.4681 | $ 23.4050 |
| 100+ | $0.4054 | $ 40.5400 |
| 500+ | $0.3672 | $ 183.6000 |
| 1000+ | $0.3473 | $ 347.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | GOODWORK 600R65F | |
| RoHS | ||
| RDS (on) | 600mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 32W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 557pF | |
| Gate Charge(Qg) | 13.5nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6624 | $ 0.6624 |
| 10+ | $0.5324 | $ 5.3240 |
| 50+ | $0.4681 | $ 23.4050 |
| 100+ | $0.4054 | $ 40.5400 |
| 500+ | $0.3672 | $ 183.6000 |
| 1000+ | $0.3473 | $ 347.3000 |
