| Fabricante | |
| Código de Pieza del Fabricante | DOU10N06 |
| Código de Pieza EBEE | E842412133 |
| Paquete | TO-251 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | TO-251 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 15+ | $0.0623 | $ 0.9345 |
| 150+ | $0.0492 | $ 7.3800 |
| 450+ | $0.0427 | $ 19.2150 |
| 1500+ | $0.0378 | $ 56.7000 |
| 7500+ | $0.0339 | $ 254.2500 |
| 15000+ | $0.0320 | $ 480.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DOU10N06 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 60mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 30pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 725pF | |
| Gate Charge(Qg) | 9.3nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 15+ | $0.0623 | $ 0.9345 |
| 150+ | $0.0492 | $ 7.3800 |
| 450+ | $0.0427 | $ 19.2150 |
| 1500+ | $0.0378 | $ 56.7000 |
| 7500+ | $0.0339 | $ 254.2500 |
| 15000+ | $0.0320 | $ 480.0000 |
