| Fabricante | |
| Código de Pieza del Fabricante | DOD9N20 |
| Código de Pieza EBEE | E842395890 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1179 | $ 0.5895 |
| 50+ | $0.1029 | $ 5.1450 |
| 150+ | $0.0965 | $ 14.4750 |
| 500+ | $0.0886 | $ 44.3000 |
| 2500+ | $0.0850 | $ 212.5000 |
| 5000+ | $0.0829 | $ 414.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DOD9N20 | |
| RoHS | ||
| Tipo | N-Channel | |
| Configuración | - | |
| RDS (on) | 300mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 24pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 82W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 2.3nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1179 | $ 0.5895 |
| 50+ | $0.1029 | $ 5.1450 |
| 150+ | $0.0965 | $ 14.4750 |
| 500+ | $0.0886 | $ 44.3000 |
| 2500+ | $0.0850 | $ 212.5000 |
| 5000+ | $0.0829 | $ 414.5000 |
