| Fabricante | |
| Código de Pieza del Fabricante | DOD60N04 |
| Código de Pieza EBEE | E841430589 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 40V 60A 47W 6.5mΩ@10V,30A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1022 | $ 0.5110 |
| 50+ | $0.0808 | $ 4.0400 |
| 150+ | $0.0701 | $ 10.5150 |
| 500+ | $0.0621 | $ 31.0500 |
| 2500+ | $0.0556 | $ 139.0000 |
| 5000+ | $0.0524 | $ 262.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DOD60N04 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 6.5mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 160pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 47W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.38nF | |
| Gate Charge(Qg) | 35nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1022 | $ 0.5110 |
| 50+ | $0.0808 | $ 4.0400 |
| 150+ | $0.0701 | $ 10.5150 |
| 500+ | $0.0621 | $ 31.0500 |
| 2500+ | $0.0556 | $ 139.0000 |
| 5000+ | $0.0524 | $ 262.0000 |
