| Fabricante | |
| Código de Pieza del Fabricante | DOD60N03 |
| Código de Pieza EBEE | E841416021 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 60A 33W 8.5mΩ@10V,25A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.0784 | $ 0.3920 |
| 50+ | $0.0624 | $ 3.1200 |
| 150+ | $0.0545 | $ 8.1750 |
| 500+ | $0.0485 | $ 24.2500 |
| 2500+ | $0.0437 | $ 109.2500 |
| 5000+ | $0.0413 | $ 206.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DOD60N03 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 14mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 145pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 33W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 1.12nF | |
| Gate Charge(Qg) | 21nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.0784 | $ 0.3920 |
| 50+ | $0.0624 | $ 3.1200 |
| 150+ | $0.0545 | $ 8.1750 |
| 500+ | $0.0485 | $ 24.2500 |
| 2500+ | $0.0437 | $ 109.2500 |
| 5000+ | $0.0413 | $ 206.5000 |
