| Fabricante | |
| Código de Pieza del Fabricante | DOD50P06 |
| Código de Pieza EBEE | E841430590 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 60V 50A 270W 20mΩ@10V,20A 2.2V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1797 | $ 0.8985 |
| 50+ | $0.1573 | $ 7.8650 |
| 150+ | $0.1477 | $ 22.1550 |
| 500+ | $0.1358 | $ 67.9000 |
| 2500+ | $0.1273 | $ 318.2500 |
| 5000+ | $0.1241 | $ 620.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DOD50P06 | |
| RoHS | ||
| Tipo | P-Channel | |
| RDS (on) | 25mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 211pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 270W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 4.399nF | |
| Gate Charge(Qg) | 114nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.1797 | $ 0.8985 |
| 50+ | $0.1573 | $ 7.8650 |
| 150+ | $0.1477 | $ 22.1550 |
| 500+ | $0.1358 | $ 67.9000 |
| 2500+ | $0.1273 | $ 318.2500 |
| 5000+ | $0.1241 | $ 620.5000 |
