| Fabricante | |
| Código de Pieza del Fabricante | DO3407BA |
| Código de Pieza EBEE | E841367402 |
| Paquete | SOT-23-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 4.3A 1.51W 55mΩ@10V,4.3A 1.1V@250uA 1 Piece P-Channel SOT-23-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0266 | $ 0.5320 |
| 200+ | $0.0207 | $ 4.1400 |
| 600+ | $0.0175 | $ 10.5000 |
| 3000+ | $0.0155 | $ 46.5000 |
| 9000+ | $0.0138 | $ 124.2000 |
| 21000+ | $0.0129 | $ 270.9000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DO3407BA | |
| RoHS | ||
| Tipo | P-Channel | |
| RDS (on) | 55mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 58pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.51W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Ciss-Input Capacitance | 580pF | |
| Gate Charge(Qg) | 12.5nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0266 | $ 0.5320 |
| 200+ | $0.0207 | $ 4.1400 |
| 600+ | $0.0175 | $ 10.5000 |
| 3000+ | $0.0155 | $ 46.5000 |
| 9000+ | $0.0138 | $ 124.2000 |
| 21000+ | $0.0129 | $ 270.9000 |
