| Fabricante | |
| Código de Pieza del Fabricante | DO3407B |
| Código de Pieza EBEE | E841384538 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 4.1A 1.3W 55mΩ@10V,4A 1.5V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0240 | $ 0.4800 |
| 200+ | $0.0187 | $ 3.7400 |
| 600+ | $0.0158 | $ 9.4800 |
| 3000+ | $0.0140 | $ 42.0000 |
| 9000+ | $0.0125 | $ 112.5000 |
| 21000+ | $0.0117 | $ 245.7000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DO3407B | |
| RoHS | ||
| Tipo | P-Channel | |
| RDS (on) | 55mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 58pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 4.1A | |
| Ciss-Input Capacitance | 575pF | |
| Output Capacitance(Coss) | 65pF | |
| Gate Charge(Qg) | 12.5nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0240 | $ 0.4800 |
| 200+ | $0.0187 | $ 3.7400 |
| 600+ | $0.0158 | $ 9.4800 |
| 3000+ | $0.0140 | $ 42.0000 |
| 9000+ | $0.0125 | $ 112.5000 |
| 21000+ | $0.0117 | $ 245.7000 |
