| Fabricante | |
| Código de Pieza del Fabricante | DO2301B |
| Código de Pieza EBEE | E841367403 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 3A 1W 55mΩ@4.5V,3A 1V@3A 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0182 | $ 0.9100 |
| 500+ | $0.0142 | $ 7.1000 |
| 3000+ | $0.0120 | $ 36.0000 |
| 6000+ | $0.0106 | $ 63.6000 |
| 24000+ | $0.0095 | $ 228.0000 |
| 51000+ | $0.0088 | $ 448.8000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DO2301B | |
| RoHS | ||
| Tipo | P-Channel | |
| RDS (on) | 55mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 60pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 477pF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0182 | $ 0.9100 |
| 500+ | $0.0142 | $ 7.1000 |
| 3000+ | $0.0120 | $ 36.0000 |
| 6000+ | $0.0106 | $ 63.6000 |
| 24000+ | $0.0095 | $ 228.0000 |
| 51000+ | $0.0088 | $ 448.8000 |
