| Fabricante | |
| Código de Pieza del Fabricante | DB006NG-B |
| Código de Pieza EBEE | E841367272 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 60A 37W 6.5mΩ@4.5V,25A 1V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0696 | $ 0.6960 |
| 100+ | $0.0558 | $ 5.5800 |
| 300+ | $0.0489 | $ 14.6700 |
| 2500+ | $0.0437 | $ 109.2500 |
| 5000+ | $0.0396 | $ 198.0000 |
| 10000+ | $0.0375 | $ 375.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DB006NG-B | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 6.5mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 270pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 37W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 1.831nF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0696 | $ 0.6960 |
| 100+ | $0.0558 | $ 5.5800 |
| 300+ | $0.0489 | $ 14.6700 |
| 2500+ | $0.0437 | $ 109.2500 |
| 5000+ | $0.0396 | $ 198.0000 |
| 10000+ | $0.0375 | $ 375.0000 |
