| Hersteller | |
| Hersteller-Teilenummer | VS-C04ET07T-M3 |
| EBEE-Teilenummer | E85208854 |
| Gehäuse | TO-220-2 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-220-2 SiC Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6547 | $ 1.6547 |
| 10+ | $1.5222 | $ 15.2220 |
| 50+ | $1.4411 | $ 72.0550 |
| 100+ | $1.3568 | $ 135.6800 |
| 500+ | $1.3194 | $ 659.7000 |
| 1000+ | $1.3023 | $ 1302.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Geräte aus Siliziumkarbid (SiC) ,SiC Dioden | |
| Datenblatt | Vishay Intertech VS-C04ET07T-M3 | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 25uA@650V | |
| Spannung - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@4A | |
| Current - Rectified | 4A | |
| Non-Repetitive Peak Forward Surge Current | 26A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6547 | $ 1.6547 |
| 10+ | $1.5222 | $ 15.2220 |
| 50+ | $1.4411 | $ 72.0550 |
| 100+ | $1.3568 | $ 135.6800 |
| 500+ | $1.3194 | $ 659.7000 |
| 1000+ | $1.3023 | $ 1302.3000 |
