| Hersteller | |
| Hersteller-Teilenummer | AOT412-VB |
| EBEE-Teilenummer | E822389903 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0352 | $ 1.0352 |
| 10+ | $0.8336 | $ 8.3360 |
| 50+ | $0.7336 | $ 36.6800 |
| 100+ | $0.6335 | $ 63.3500 |
| 500+ | $0.5732 | $ 286.6000 |
| 1000+ | $0.5430 | $ 543.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec AOT412-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 9mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 265pF | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.7nF | |
| Output Capacitance(Coss) | 665pF | |
| Gate Charge(Qg) | 105nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0352 | $ 1.0352 |
| 10+ | $0.8336 | $ 8.3360 |
| 50+ | $0.7336 | $ 36.6800 |
| 100+ | $0.6335 | $ 63.3500 |
| 500+ | $0.5732 | $ 286.6000 |
| 1000+ | $0.5430 | $ 543.0000 |
