5% off
| Hersteller | |
| Hersteller-Teilenummer | 2SJ360-VB |
| EBEE-Teilenummer | E8724947 |
| Gehäuse | SOT-89 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 4.8A 2.1W 1.2V@250uA 1 Piece P-Channel SOT-89-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3896 | $ 0.3896 |
| 10+ | $0.3114 | $ 3.1140 |
| 30+ | $0.2783 | $ 8.3490 |
| 100+ | $0.2362 | $ 23.6200 |
| 500+ | $0.1895 | $ 94.7500 |
| 1000+ | $0.1776 | $ 177.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec 2SJ360-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 58mΩ@10V;65mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 150pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2.1W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 1.5nF | |
| Gate Charge(Qg) | 38nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3896 | $ 0.3896 |
| 10+ | $0.3114 | $ 3.1140 |
| 30+ | $0.2783 | $ 8.3490 |
| 100+ | $0.2362 | $ 23.6200 |
| 500+ | $0.1895 | $ 94.7500 |
| 1000+ | $0.1776 | $ 177.6000 |
