| Hersteller | |
| Hersteller-Teilenummer | TDM3726 |
| EBEE-Teilenummer | E8397044 |
| Gehäuse | TO-263-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 200A 250W 2.6mΩ@10V,20A 1.8V@250uA 1 N-channel TO-263-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1439 | $ 1.1439 |
| 10+ | $0.9536 | $ 9.5360 |
| 30+ | $0.8473 | $ 25.4190 |
| 100+ | $0.7299 | $ 72.9900 |
| 500+ | $0.6759 | $ 337.9500 |
| 800+ | $0.6521 | $ 521.6800 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Techcode TDM3726 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 3.3mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 547pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 7.356nF | |
| Output Capacitance(Coss) | 814pF | |
| Gate Charge(Qg) | 70nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1439 | $ 1.1439 |
| 10+ | $0.9536 | $ 9.5360 |
| 30+ | $0.8473 | $ 25.4190 |
| 100+ | $0.7299 | $ 72.9900 |
| 500+ | $0.6759 | $ 337.9500 |
| 800+ | $0.6521 | $ 521.6800 |
