| Hersteller | |
| Hersteller-Teilenummer | TDM3536 |
| EBEE-Teilenummer | E8380224 |
| Gehäuse | PPAK-8(3x3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 46A 4.2mΩ@10V,12A 31.3W 2.5V@250uA 1 N-channel PPAK-8(3x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3603 | $ 1.8015 |
| 50+ | $0.2923 | $ 14.6150 |
| 150+ | $0.2632 | $ 39.4800 |
| 500+ | $0.2268 | $ 113.4000 |
| 3000+ | $0.2106 | $ 631.8000 |
| 6000+ | $0.2009 | $ 1205.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Techcode TDM3536 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 6.5mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 65pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 31.3W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 1.35nF | |
| Output Capacitance(Coss) | 900pF | |
| Gate Charge(Qg) | 8.8nC@15V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3603 | $ 1.8015 |
| 50+ | $0.2923 | $ 14.6150 |
| 150+ | $0.2632 | $ 39.4800 |
| 500+ | $0.2268 | $ 113.4000 |
| 3000+ | $0.2106 | $ 631.8000 |
| 6000+ | $0.2009 | $ 1205.4000 |
