| Hersteller | |
| Hersteller-Teilenummer | TDM3426B |
| EBEE-Teilenummer | E8189992 |
| Gehäuse | SOT-89 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 18A 3.5W 10mΩ@10V,10A 2.5V@250uA 1 N-channel SOT-89 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2157 | $ 1.0785 |
| 50+ | $0.1679 | $ 8.3950 |
| 150+ | $0.1474 | $ 22.1100 |
| 500+ | $0.1218 | $ 60.9000 |
| 3000+ | $0.1104 | $ 331.2000 |
| 6000+ | $0.1035 | $ 621.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Techcode TDM3426B | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 16mΩ@4.5V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 22pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 20W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 600pF | |
| Output Capacitance(Coss) | 318pF | |
| Gate Charge(Qg) | 12nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2157 | $ 1.0785 |
| 50+ | $0.1679 | $ 8.3950 |
| 150+ | $0.1474 | $ 22.1100 |
| 500+ | $0.1218 | $ 60.9000 |
| 3000+ | $0.1104 | $ 331.2000 |
| 6000+ | $0.1035 | $ 621.0000 |
