| Hersteller | |
| Hersteller-Teilenummer | TDM31066A |
| EBEE-Teilenummer | E85122436 |
| Gehäuse | PPAK-8(3x3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 40A 50W 1 N-channel PPAK-8(3x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5617 | $ 0.5617 |
| 10+ | $0.4554 | $ 4.5540 |
| 30+ | $0.4030 | $ 12.0900 |
| 100+ | $0.3491 | $ 34.9100 |
| 500+ | $0.3031 | $ 151.5500 |
| 1000+ | $0.2872 | $ 287.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Techcode TDM31066A | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 14.3mΩ@10V;18.8mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 60pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.13nF | |
| Output Capacitance(Coss) | 496pF | |
| Gate Charge(Qg) | 30nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5617 | $ 0.5617 |
| 10+ | $0.4554 | $ 4.5540 |
| 30+ | $0.4030 | $ 12.0900 |
| 100+ | $0.3491 | $ 34.9100 |
| 500+ | $0.3031 | $ 151.5500 |
| 1000+ | $0.2872 | $ 287.2000 |
