| Hersteller | |
| Hersteller-Teilenummer | STD15P6F6AG |
| EBEE-Teilenummer | E85246432 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3522 | $ 0.3522 |
| 10+ | $0.2857 | $ 2.8570 |
| 30+ | $0.2525 | $ 7.5750 |
| 100+ | $0.2276 | $ 22.7600 |
| 1000+ | $0.1977 | $ 197.7000 |
| 2500+ | $0.1943 | $ 485.7500 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | TECH PUBLIC STD15P6F6AG | |
| RoHS | ||
| RDS(on) | 100mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 77.3pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | 1.6307nF | |
| Output Capacitance(Coss) | 90.6pF | |
| Gate Charge(Qg) | 37.6nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3522 | $ 0.3522 |
| 10+ | $0.2857 | $ 2.8570 |
| 30+ | $0.2525 | $ 7.5750 |
| 100+ | $0.2276 | $ 22.7600 |
| 1000+ | $0.1977 | $ 197.7000 |
| 2500+ | $0.1943 | $ 485.7500 |
