| Hersteller | |
| Hersteller-Teilenummer | GC4D20120A |
| EBEE-Teilenummer | E87435079 |
| Gehäuse | TO-220-2 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 1.2kV 1.5V 54.5A TO-220-2 SiC Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.6229 | $ 2.6229 |
| 10+ | $2.2879 | $ 22.8790 |
| 50+ | $1.9450 | $ 97.2500 |
| 100+ | $1.7306 | $ 173.0600 |
| 500+ | $1.6338 | $ 816.9000 |
| 1000+ | $1.5909 | $ 1590.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Geräte aus Siliziumkarbid (SiC) ,SiC Dioden | |
| Datenblatt | SUPSiC GC4D20120A | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 200uA@1200V | |
| Spannung - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.5V | |
| Current - Rectified | 54.5A | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.6229 | $ 2.6229 |
| 10+ | $2.2879 | $ 22.8790 |
| 50+ | $1.9450 | $ 97.2500 |
| 100+ | $1.7306 | $ 173.0600 |
| 500+ | $1.6338 | $ 816.9000 |
| 1000+ | $1.5909 | $ 1590.9000 |
