| Hersteller | |
| Hersteller-Teilenummer | STGWA80H65DFB |
| EBEE-Teilenummer | E85268579 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-247 IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.1373 | $ 3.1373 |
| 10+ | $2.6690 | $ 26.6900 |
| 30+ | $2.3768 | $ 71.3040 |
| 90+ | $2.0768 | $ 186.9120 |
| 510+ | $1.9402 | $ 989.5020 |
| 990+ | $1.8815 | $ 1862.6850 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | STMicroelectronics STGWA80H65DFB | |
| RoHS | ||
| Temperatur | -55℃~+175℃ | |
| Durchlaufspannung der Vermittler (Vaben) | 650V | |
| Tor-Emitter Schwellenspannung (Vge(th) Ic) | 5V@1mA | |
| Pd - Power Dissipation | 469W | |
| Gate Charge(Qg) | 414nC@15V | |
| Td(off) | 280ns | |
| Td(on) | 84ns | |
| Reverse Transfer Capacitance (Cres) | 215pF | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 2.1mJ | |
| Input Capacitance(Cies) | 10.524nF | |
| Pulsed Current- Forward(Ifm) | 240A | |
| Output Capacitance(Coes) | 385pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.1373 | $ 3.1373 |
| 10+ | $2.6690 | $ 26.6900 |
| 30+ | $2.3768 | $ 71.3040 |
| 90+ | $2.0768 | $ 186.9120 |
| 510+ | $1.9402 | $ 989.5020 |
| 990+ | $1.8815 | $ 1862.6850 |
