63% off
| Hersteller | |
| Hersteller-Teilenummer | STGD4M65DF2 |
| EBEE-Teilenummer | E8222118 |
| Gehäuse | DPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 68W 8A 650V FS(Field Stop) TO-252-2(DPAK) IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3117 | $ 0.3117 |
| 10+ | $0.2835 | $ 2.8350 |
| 30+ | $0.2683 | $ 8.0490 |
| 100+ | $0.2507 | $ 25.0700 |
| 500+ | $0.2425 | $ 121.2500 |
| 1000+ | $0.2390 | $ 239.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | STMicroelectronics STGD4M65DF2 | |
| RoHS | ||
| Temperatur | -55℃~+175℃@(Tj) | |
| Durchlaufspannung der Vermittler (Vaben) | 650V | |
| Tor-Emitter Schwellenspannung (Vge(th) Ic) | 5V@250uA | |
| Pd - Power Dissipation | 68W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 15.2nC | |
| Td(off) | 86ns | |
| Td(on) | 12ns | |
| Reverse Transfer Capacitance (Cres) | 8pF | |
| Reverse Recovery Time(trr) | 133ns | |
| Switching Energy(Eoff) | 136uJ | |
| Turn-On Energy (Eon) | 40uJ | |
| Input Capacitance(Cies) | 369pF | |
| Pulsed Current- Forward(Ifm) | 16A | |
| Output Capacitance(Coes) | 24.8pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3117 | $ 0.3117 |
| 10+ | $0.2835 | $ 2.8350 |
| 30+ | $0.2683 | $ 8.0490 |
| 100+ | $0.2507 | $ 25.0700 |
| 500+ | $0.2425 | $ 121.2500 |
| 1000+ | $0.2390 | $ 239.0000 |
