| Hersteller | |
| Hersteller-Teilenummer | STF6N65K3 |
| EBEE-Teilenummer | E8165616 |
| Gehäuse | TO-220FP |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 5.4A 30W 1.1Ω@10V,2.7A 4.5V@50uA 1 N-channel TO-220AB-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6330 | $ 0.6330 |
| 10+ | $0.5064 | $ 5.0640 |
| 50+ | $0.4431 | $ 22.1550 |
| 100+ | $0.3814 | $ 38.1400 |
| 500+ | $0.3443 | $ 172.1500 |
| 1200+ | $0.3242 | $ 389.0400 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STF6N65K3 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.3Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 5.4A | |
| Ciss-Input Capacitance | 880pF | |
| Output Capacitance(Coss) | 65pF | |
| Gate Charge(Qg) | 33nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6330 | $ 0.6330 |
| 10+ | $0.5064 | $ 5.0640 |
| 50+ | $0.4431 | $ 22.1550 |
| 100+ | $0.3814 | $ 38.1400 |
| 500+ | $0.3443 | $ 172.1500 |
| 1200+ | $0.3242 | $ 389.0400 |
