| Hersteller | |
| Hersteller-Teilenummer | STF20N65M5 |
| EBEE-Teilenummer | E8726093 |
| Gehäuse | TO-220-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 18A 190mΩ@10V,9A 30W 5V@250uA 1 N-channel TO-220-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5644 | $ 1.5644 |
| 10+ | $1.4255 | $ 14.2550 |
| 30+ | $1.3386 | $ 40.1580 |
| 100+ | $1.2502 | $ 125.0200 |
| 500+ | $1.2108 | $ 605.4000 |
| 1000+ | $1.1934 | $ 1193.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STF20N65M5 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 190mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 3.7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.434nF | |
| Output Capacitance(Coss) | 38pF | |
| Gate Charge(Qg) | 36nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5644 | $ 1.5644 |
| 10+ | $1.4255 | $ 14.2550 |
| 30+ | $1.3386 | $ 40.1580 |
| 100+ | $1.2502 | $ 125.0200 |
| 500+ | $1.2108 | $ 605.4000 |
| 1000+ | $1.1934 | $ 1193.4000 |
