| Hersteller | |
| Hersteller-Teilenummer | STF10N80K5 |
| EBEE-Teilenummer | E8163539 |
| Gehäuse | TO-220FP |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 800V 9A 30W 600mΩ@10V,4.5A 5V@100uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.1228 | $ 2.1228 |
| 10+ | $1.8386 | $ 18.3860 |
| 50+ | $1.6608 | $ 83.0400 |
| 100+ | $1.4798 | $ 147.9800 |
| 500+ | $1.3972 | $ 698.6000 |
| 1000+ | $1.3607 | $ 1360.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STF10N80K5 | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 600mΩ@10V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 0.8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 635pF | |
| Output Capacitance(Coss) | 53pF | |
| Gate Charge(Qg) | 22nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.1228 | $ 2.1228 |
| 10+ | $1.8386 | $ 18.3860 |
| 50+ | $1.6608 | $ 83.0400 |
| 100+ | $1.4798 | $ 147.9800 |
| 500+ | $1.3972 | $ 698.6000 |
| 1000+ | $1.3607 | $ 1360.7000 |
